Author:
Wang Ting ,Zhang Jian-Jun ,Huiyun Liu , ,
Abstract
In this article, the recent progress of III-V quantum dot lasers on silicon substrates for silicon photonic integration is reviewed. By introducing various epitaxial techniques, room-temperature 1.3-m InAs/GaAs quantum dot laser on Si, Ge and SiGe substrates have been achieved respectively. Quantum dot lasers on Ge substrate has an ultra-low threshold current density of 55.2 A/cm2 at room temperature, which can operate over 60 ℃ in continuous-wave mode. Futhermore, by using the SiGe virtual substrate, at 30 ℃ and an output power of 16.6 mW, a laser lifetime of 4600 h has been reached, which indicates a bright future for the large-scale photonic integration.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
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