Genetic-Algorithm Discovery of a Direct-Gap and Optically Allowed Superstructure from Indirect-Gap Si and Ge Semiconductors-Reference-Cited by-同舟云学术

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Genetic-Algorithm Discovery of a Direct-Gap and Optically Allowed Superstructure from Indirect-Gap Si and Ge Semiconductors

Published:2012-01-12 Issue:2 Volume:108 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

d’Avezac Mayeul,Luo Jun-Wei,Chanier Thomas,Zunger Alex

Funder

U.S. Department of Energy

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.108.027401/fulltext

Reference20 articles.

1. An efficient room-temperature silicon-based light-emitting diode

2. Silicon LEDs fabricated in standard VLSI technology as components for all silicon monolithic integrated optoelectronic systems

3. Room‐temperature sharp line electroluminescence at λ=1.54 μm from an erbium‐doped, silicon light‐emitting diode

4. Prediction that Uniaxial Tension along⟨111⟩Produces a Direct Band Gap in Germanium

5. Computational design of silicon-based direct-band gap nanostructure: Silicon nanonet

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