Stable continuous room‐temperature laser operation of AlxGa1−xAs‐GaAs quantum well heterostructures grown on Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98879
Reference9 articles.
1. Low‐threshold high‐efficiency AlGaAs‐GaAs double‐heterostructure injection lasers grown on Si substrates by metalorganic chemical vapor deposition
2. Low threshold pulsed and continuous laser oscillation from AlGaAs/GaAs double heterostructures grown by metalorganic chemical vapor deposition on Si substrates
3. Continuous (300 K) photopumped laser operation of AlxGa1−xAs‐GaAs quantum well heterostructures grown on strained‐layer GaAs on Si
4. Metalorganic chemical vapor deposition of III‐V semiconductors
5. Stimulated emission in strained‐layer quantum‐well heterostructures
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1. Direct Bonding of Gallium Arsenide on Silicon;Japanese Journal of Applied Physics;1999-07-15
2. Removal of threading dislocations from patterned heteroepitaxial semiconductors by glide to sidewalls;Journal of Electronic Materials;1998-11
3. Post-growth thermal annealing of GaAs on Si(001) grown by organometallic vapor phase epitaxy;Journal of Crystal Growth;1992-11
4. Use of phenylarsine in the atmospheric pressure metal organic chemical vapour deposition of GaAs on Si(100);Journal of Materials Chemistry;1991
5. Crystallinity and Schottky diode characteristics of GaAs grown on Si by metalorganic chemical vapor deposition;Journal of Applied Physics;1990-06
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