Crystallinity and Schottky diode characteristics of GaAs grown on Si by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345083
Reference8 articles.
1. Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD
2. MOCVD growth and characterization of GaAs and GaP grown on Si substrates
3. GaAs E/D MESFET 1-kbit static RAM fabricated on silicon substrate
4. Electrical activity of defects in molecular beam epitaxially grown GaAs on Si and its reduction by rapid thermal annealing
5. Stable continuous room‐temperature laser operation of AlxGa1−xAs‐GaAs quantum well heterostructures grown on Si
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1. Advancements in Schottky Diode Technology: A Comprehensive Review;2023 7th International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech);2023-12-18
2. Effects of 1 MeV Electron Irradiation on the Schottky Diode Characteristics of n-GaAs/Si;Japanese Journal of Applied Physics;2004-10-08
3. Hydrogenation of GaAs-on-Si Schottky diodes by PH3-added H2 plasma;Applied Surface Science;2000-06
4. Effect of NaOCl-Polishing on Metal Organic Chemical Vapor Deposition grown GaAs Surface on Si Substrate by Spectroscopic Ellipsometry and Atomic Force Microscopy;Japanese Journal of Applied Physics;1997-05-15
5. Effect of thermal cyclic growth on deep levels in heterostructures grown by MOCVD;Applied Surface Science;1997-04
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