Electrical activity of defects in molecular beam epitaxially grown GaAs on Si and its reduction by rapid thermal annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98815
Reference7 articles.
1. GaAs avalanche photodiodes and the effect of rapid thermal annealing on crystalline quality of GaAs grown on Si by molecular-beam epitaxy
2. Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealing
3. Passivation of Si donors and DX centers in AlGaAs by hydrogen plasma exposure
4. Schottky‐barrier height of ideal metal contacts to GaAs
5. Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates
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