Revisit to the finite element modeling of electromigration for narrow interconnects

Author:

Tan Cher Ming,Hou Yuejin,Li Wei

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference24 articles.

1. S. Rzepka, E. Meusel, M. A. Korhonen, and C. Y. Li, in Stress-Induced Phenomena in Metallization: Fifth International Workshop, edited by O. Kraft, E. Arzt, C. A. Volkert, P. S. Ho, and H. Okabayashi (AIP, New York, 1999), pp. 150–161.

2. Three-Dimensional Voids Simulation in chip Metallization Structures: a Contribution to Reliability Evaluation

3. Investigation of the effect of temperature and stress gradients on accelerated EM test for Cu narrow interconnects

4. Dynamic simulation of electromigration in polycrystalline interconnect thin film using combined Monte Carlo algorithm and finite element modeling

5. Proceeding of the 12th IEEE International Symposium on Reliability Physics;Black J. R.,1974

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