Electromigration Analysis of VLSI Circuits Using the Finite Element Method-Reference-Cited by-同舟云学术

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Electromigration Analysis of VLSI Circuits Using the Finite Element Method

Published:2019 Issue: Volume: Page:133-152
ISSN:1868-4238
Container-title:VLSI-SoC: Opportunities and Challenges Beyond the Internet of Things
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Author:

Thiele Matthias,Bigalke Steve,Lienig Jens

Publisher

Springer International Publishing

Link

http://link.springer.com/content/pdf/10.1007/978-3-030-15663-3_7

Reference15 articles.

1. International Technology Roadmap for Semiconductors (ITRS), 2013 Edition. http://www.itrs2.net/itrs-reports.html

2. Lienig, J.: Electromigration and its impact on physical design in future technologies. In: Proceedings of the ACM International Symposium on Physical Design (ISPD), pp. 33–40 (2013). https://doi.org/10.1145/2451916.2451925

3. Lienig, J.: Interconnect and current density stress - an introduction to electromigration-aware design. In: Markov, I. (ed.) SLIP. ACM, San Francisco (2005). https://doi.org/10.1145/1053355.1053374

4. Lienig, J., Thiele, M.: Fundamentals of Electromigration-Aware Integrated Circuit Design. Springer, Cham (2018). https://doi.org/10.1007/978-3-319-73558-0

5. Thiele, M., Bigalke, S., Lienig, J.: Exploring the use of the finite element method for electromigration analysis in future physical design. In: 2017 IFIP/IEEE International Conference on Very Large Scale Integration (VLSI-SoC), pp. 1–6 (2017). https://doi.org/10.1109/VLSI-SoC.2017.8203466

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2. Toward Security Closure in the Face of Reliability Effects ICCAD Special Session Paper;2021 IEEE/ACM International Conference On Computer Aided Design (ICCAD);2021-11-01

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