Evaluation of strained InGaAs/GaAs quantum wells by atomic force microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118507
Reference8 articles.
1. Graded‐index separate‐confinement InGaAs/GaAs strained‐layer quantum well laser grown by metalorganic chemical vapor deposition
2. Characterization and determination of the band‐gap discontinuity of the InxGa1−xAs/GaAs pseudomorphic quantum well
3. Materials characteristics of pseudomorphic high electron mobility transistor structures with InxGa1−xas single quantum well and GaAs-InxGa1−xas (0.25 < x < 0.4) thin strained superlattice active layers
4. Growth mechanism of GaAs by metalorganic vapor phase epitaxy
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3. MBE growth of high performance very long wavelength InGaAs/GaAs quantum well infrared photodetectors;Journal of Physics D: Applied Physics;2020-01-22
4. Lifetime behavior of laser diodes with highly strained InGaAs QWs and emission wavelength between 1120 nm and 1180 nm;Journal of Crystal Growth;2018-06
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