Lifetime behavior of laser diodes with highly strained InGaAs QWs and emission wavelength between 1120 nm and 1180 nm-Reference-Cited by-同舟云学术

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Lifetime behavior of laser diodes with highly strained InGaAs QWs and emission wavelength between 1120 nm and 1180 nm

Published:2018-06 Issue: Volume:491 Page:31-35
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Bugge F.,Bege R.,Blume G.,Feise D.,Sumpf B.,Werner N.,Zeimer U.,Paschke K.,Weyers M.

Funder

Ministry of Education and Research

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference24 articles.

1. Manufacturing with novel high-power diode lasers

2. Lasing Characteristics of 1.2 µm Highly Strained GaInAs/GaAs Quantum Well Lasers

3. Directly diode-pumped holmium fiber lasers

4. High-power and highly efficient Tm^3+-doped silica fiber lasers pumped with diode lasers operating at 1150 nm

5. Hyperfine-structure measurements in141PrIIand143,145NdIIby collinear laser-ion-beam spectroscopy

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1. Distributed Bragg reflector tapered diode lasers emitting reliably more than 7 W at 1180 nm;High-Power Diode Laser Technology XXII;2024-03-12

2. Research progress of monolithic integration master-oscillation power-amplifiers;Chinese Optics;2023

3. Strain-free SESAMs with iron doped absorber for femtosecond fiber laser mode locking at 1560 nm;Optics Express;2022-06-01

4. Strained-layer quantum well materials grown by MOCVD for diode laser application;Progress in Quantum Electronics;2021-01

5. Interplay of GaAsP barrier and strain compensation in InGaAs quantum well at near-critical thickness;Journal of Crystal Growth;2020-02

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