Lasing Characteristics of 1.2 µm Highly Strained GaInAs/GaAs Quantum Well Lasers-Reference-Cited by-同舟云学术

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Lasing Characteristics of 1.2 µm Highly Strained GaInAs/GaAs Quantum Well Lasers

Published:2001-02-15 Issue:Part 1, No. 2A Volume:40 Page:467-471
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kondo Takashi,Schlenker Dietmar,Miyamoto Tomoyuki,Chen Zhibiao,Kawaguchi Masao,Gouardes Eric,Koyama Fumio,Iga Kenichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MOCVD growth and thermal stability analysis of 1.2 µm InGaAs/GaAs multi quantum well structure;Journal of Alloys and Compounds;2022-11

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3. Strained-layer quantum well materials grown by MOCVD for diode laser application;Progress in Quantum Electronics;2021-01

4. Interplay of GaAsP barrier and strain compensation in InGaAs quantum well at near-critical thickness;Journal of Crystal Growth;2020-02

5. Lifetime behavior of laser diodes with highly strained InGaAs QWs and emission wavelength between 1120 nm and 1180 nm;Journal of Crystal Growth;2018-06

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