Growth mechanism of GaAs by metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111697
Reference5 articles.
1. Theoretical Study of Mode Transition between 2d-Nucleation and Step Flow in MBE Growth of GaAs
2. The growth of crystals and the equilibrium structure of their surfaces
3. Surface morphology of metalorganic vapor phase epitaxy grown GaAs observed by atomic force microscopy
4. Microscopic growth mechanisms of semiconductors: Experiments and models
5. Defect mechanisms of crystal growth and their kinetics
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1. Fundamental aspects of organometallic vapor phase epitaxy;Materials Science and Engineering: B;2001-11
2. Atomic force microscopic study of surface morphology in Si-doped epi-GaAs on Ge substrates: effect of off-orientation;Materials Research Bulletin;2000-04
3. Effects of group V precursor and step structure on ordering in GaInP;Journal of Electronic Materials;1997-10
4. Evaluation of strained InGaAs/GaAs quantum wells by atomic force microscopy;Applied Physics Letters;1997-03-03
5. Correlation between surface structure and ordering in GaInP;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-07
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