Characterization and determination of the band‐gap discontinuity of the InxGa1−xAs/GaAs pseudomorphic quantum well
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104570
Reference22 articles.
1. Band structure engineering of semiconductor lasers for optical communications
2. Dependence of threshold current density on quantum well composition for strained‐layer InGaAs‐GaAs lasers by metalorganic chemical vapor deposition
3. Graded‐index separate‐confinement InGaAs/GaAs strained‐layer quantum well laser grown by metalorganic chemical vapor deposition
4. Measurement of the carrier dependence of differential gain, refractive index, and linewidth enhancement factor in strained‐layer quantum well lasers
5. Gain characteristics of strained quantum well lasers
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1. Effect of Asymmetric Well Quantum Dots-in-a-well Infrared Photodetectors on Density of States Using NEGF Formalism;Physics Procedia;2012
2. Compositional dependence of the bowing parameter for highly strained InGaAs/GaAs quantum wells;Physical Review B;2009-10-06
3. Spectral function of InAs∕InGaAs quantum dots in a well detector using Green’s function;Journal of Applied Physics;2006-11
4. Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3μm;Applied Physics Letters;2006-10-23
5. Optical characterization and determination of conduction band offset of type-II GaAsSb/InGaAs QW;Semiconductor Science and Technology;2004-10-13
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