Experimental study on the oxide trap coupling effect in metal oxide semiconductor field effect transistors with HfO2 gate dielectrics
Author:
Affiliation:
1. Institute of Microelectronics, Peking University, Beijing 100871, China
Funder
National Natural Science Foundation of China (NSFC)
973 Projects
National S&T Major Project
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4885394
Reference12 articles.
1. Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities
2. Random telegraph signal noise in gate-all-around silicon nanowire transistors featuring Coulomb-blockade characteristics
3. Statistics of Multiple Trapped Charges in the Gate Oxide of Deeply Scaled MOSFET Devices—Application to NBTI
4. Characterization and modeling of trap number and creation time distributions under negative-bias-temperature stress
5. A unified approach for trap-aware device/circuit co-design in nanoscale CMOS technology
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