Random telegraph signal noise in gate-all-around silicon nanowire transistors featuring Coulomb-blockade characteristics
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3089240
Reference18 articles.
1. High Performance Silicon Nanowire Field Effect Transistors
2. Experimental investigations on channel backscattering characteristics of gate-all-around silicon nanowire transistors from top-down approach
3. Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs
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