Anomalous random telegraph noise in nanoscale transistors as direct evidence of two metastable states of oxide traps
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-017-06467-7.pdf
Reference21 articles.
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3. Grasser, T., Reisinger, H., Wagner, P.-J. & Kaczer, B. Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors. Phys. Rev. B 82, 245318 (2010).
4. Kaczer, B. Roussel, Ph. J., Grasser, T. & Groeseneken, G. Statistics of multiple trapped charges in the gate oxide of deeply scaled MOSFET devices—application to NBTI. IEEE Electron Device Lett. 31, 411–413 (2010).
5. Clement, N., Nishiguchi, K., Fujiwara, A. & Vuillaume, D. One-by-one trap activation in silicon nanowire transistor. Nat. Commun. 1, 92, doi: 10.1038/ncomms1092 (2010).
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