Author:
Zou Jibin,Guo Shaofeng,Huang Ru,Wang Runsheng
Publisher
Springer International Publishing
Reference42 articles.
1. K.K. Hung, P.K. Ko, C. Hu, Y.C. Cheng, Random telegraph noise of deep-submicrometer MOSFETs. IEEE Electron Device Lett. 11(2), 90–92 (1990)
2. M. Tsai, T.-P. Ma, The impact of device scaling on the current fluctuations in MOSFETs. IEEE Trans. Electron Devices 41(11), 2061–2068 (1994)
3. N. Tega, H. Miki, F. Pagette, D.J. Frank, A. Ray, M.J. Rooks, W. Haensch, and K. Torii, Increasing threshold voltage variation due to random telegraph noise in FETs as gate lengths scale to 20 nm. 2009 Symposium on VLSI Technology, 2009, pp. 50–51
4. T. Nagumo, K. Takeuchi, S. Yokogawa, K. Imai, and Y. Hayashi, New analysis methods for comprehensive understanding of random telegraph noise. 2009 I.E. International Electron Devices Meeting (IEDM), 2009, pp. 759–762
5. J.P. Campbell, L.C. Yu, K.P. Cheung, J. Qin, J.S. Suehle, A. Oates, and K. Sheng, Random telegraph noise in highly scaled MOSFETs. 2009 I.E. International Reliability Physics Symposium. 2009, pp. 382–388
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