Characterization and modeling of trap number and creation time distributions under negative-bias-temperature stress-Reference-Cited by-同舟云学术

Characterization and modeling of trap number and creation time distributions under negative-bias-temperature stress

Published:2012-08-20 Issue:8 Volume:101 Page:082906
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chiu Jung-Piao,Li Chi-Wei,Wang Tahui

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4748108

Reference8 articles.

1. Effect of BTI Degradation on Transistor Variability in Advanced Semiconductor Technologies

2. Review and Reexamination of Reliability Effects Related to NBTI-Induced Statistical Variations

3. Statistics of Multiple Trapped Charges in the Gate Oxide of Deeply Scaled MOSFET Devices—Application to NBTI

4. B. Kaczer, T. Grasser, Ph. J. Rousse, J. Franco, R. Degraeve, L.A. Ragnarsson, E. Simoen, G. Groeseneken, and H. Reisinger, in Proceedings of the International Reliab. Physics Symposium (IEEE Anaheim, CA, 2010), p. 26.

5. T. Grasser, H. Reisinger, P.J. Wagner, F. Schanovsky, W. Goes, and B. Kaczer, in Proceedings of the International Reliab. Physics Symposium (IEEE Anaheim, CA, 2010), p. 16.

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3. Statistical Characterization of BTI-Induced High-k Dielectric Traps in Nanoscale Transistors;Bias Temperature Instability for Devices and Circuits;2013-09-10

4. Statistical Characterization and Modeling of the Temporal Evolutions of $\Delta V_{\rm t}$ Distribution in NBTI Recovery in Nanometer MOSFETs;IEEE Transactions on Electron Devices;2013-03