Piezoelectric strain in AlGaN∕GaN heterostructure field-effect transistors under bias
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2182011
Reference21 articles.
1. Reliability Evaluation of High Power AlGaN/GaN HEMTs on SiC Substrate
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