Reliability Evaluation of High Power AlGaN/GaN HEMTs on SiC Substrate-Reference-Cited by-同舟云学术

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Reliability Evaluation of High Power AlGaN/GaN HEMTs on SiC Substrate

Published:2001-11 Issue:1 Volume:188 Page:203-206
ISSN:0031-8965
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Kim H.,Tilak V.,Green B.M.,Smart J.A.,Schaff W.J.,Shealy J.R.,Eastman L.F.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Joint ONR/MURI Review (5/15-16, 2001), CA, USA.

2. GaN microwave electronics

3. and submitted to IEEE Electron Dev. Lett.

4. and Proc. IRPS 2001, Internat. Rel. Phys. Symp. (2001) (p. 214).

5. and IEEE MTT-S Tech. Digest (1996) (p. 46).

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