RF Overdrive Burnout Behavior and Mechanism Analysis of GaN HEMTs Based on High Speed Camera
Author:
Affiliation:
1. School of Microelectronics, Xidian University, Xi’an, Shannxi, China
2. Fifth Electronics Research Institute, Ministry of Industry and Information Technology, Guangzhou, Guandong, China
Funder
National Natural Science Foundation of China
Guangzhou Basic and Applied Basic Research Project
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology
Link
http://xplorestaging.ieee.org/ielx7/6245494/10049274/10024816.pdf?arnumber=10024816
Reference42 articles.
1. Simulation Research on Single Event Burnout Performances of p-GaN Gate HEMTs With 2DEG Al x Ga1-x N Channel
2. Reliability Assessment Of AlGaN/GaN HEMTs on the SiC Substrate Under the RF Stress
3. Influence of Microwave Pulse Power on The Burnout Effect of The AlGaN/GaN HEMT in a LNA
4. Generation of traps in AlGaN/GaN HEMTs during RF-and DC-stress test
5. High-Speed Camera Observation of Coal Combustion in Air and O2/CO2Mixtures and Measurement of Burning Coal Particle Velocity†
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrical and Small-Signal Characteristics Degradation of RF GaN HEMTs Under Repetitive ESD Stresses;IEEE Transactions on Electron Devices;2024-08
2. Effect of Hydrogen on Electrical Characteristics of AlGaN/GaN HEMTs After HTO Stress;IEEE Transactions on Electron Devices;2024
3. Efficacy of back barrier engineered Π-gate InAlN/GaN high electron mobility transistors for high-power applications;Journal of Physics D: Applied Physics;2023-07-12
4. Efficacy of Π-Gate in RF Power Performance of Thin GaN Buffer AlGaN/GaN HEMTs;IEEE Transactions on Electron Devices;2023-05
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3