Simulation Research on Single Event Burnout Performances of p-GaN Gate HEMTs With 2DEG Al x Ga1-x N Channel-Reference-Cited by-同舟云学术

Simulation Research on Single Event Burnout Performances of p-GaN Gate HEMTs With 2DEG Al_xGa_1-xN Channel

Published:2022-03 Issue:3 Volume:69 Page:973-980
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Liu Shuang¹^ORCID,Zhang Jincheng¹^ORCID,Zhao Shenglei¹^ORCID,Shu Lei²^ORCID,Song Xiufeng¹^ORCID,Qin Xuexue³,Wu Yinhe¹^ORCID,Zhang Weihang¹^ORCID,Li Tongde²^ORCID,Wang Liang²^ORCID,Liu Zhihong¹,Zhao Yuanfu²,Hao Yue¹

Affiliation:

1. Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, China

2. Beijing Microelectronics Technology Institute, Beijing, China

3. Material Management Department, China Academy of Space Technology, Xi’an, China

Funder

National Natural Science Foundation of China

National Science Fund for Distinguished Young Scholars

Fundamental Research Plan

Fundamental Research Funds for the Central Universities

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9722602/09689962.pdf?arnumber=9689962

Reference42 articles.

1. Determination of Single-Event Effect Application Requirements for Enhancement Mode Gallium Nitride HEMTs for Use in Power Distribution Circuits

2. Ohmic contacts to Gallium Nitride materials

3. Comprehensive Design of Device Parameters for GaN Vertical Trench MOSFETs

4. Numerical Analysis of Buffer-Trap Effects on Gate Lag in AlGaN/GaN High Electron Mobility Transistors

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