Access Region Stack Engineering for Mitigation of Degradation in AlGaN/GaN HEMTs With Field Plate
Author:
Affiliation:
1. Department of Electronics and Electrical Engineering, Indian Institute of Technology Guwahati, Guwahati, India
2. Department of Electronics and Communication Engineering, North Eastern Regional Institute of Science and Technology, Nirjuli, India
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/7298/9730817/09709598.pdf?arnumber=9709598
Reference70 articles.
1. Reliability of thermal interface materials: A review
2. Analysis of the Breakdown Characterization Method in GaN-Based HEMTs
3. AlGaN/GaN HEMTs on Silicon With Hybrid Schottky–Ohmic Drain for High Breakdown Voltage and Low Leakage Current
4. Design and Demonstration of High Breakdown Voltage GaN High Electron Mobility Transistor (HEMT) Using Field Plate Structure for Power Electronics Applications
5. Characteristics of AlGaN/GaN HEMTs With Various Field-Plate and Gate-to-Drain Extensions
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1. Development of Diamond Device-Level Heat Spreader for the Advancement of GaN HEMT Power and RF Electronics;IEEE Transactions on Device and Materials Reliability;2023-12
2. Design of Trench MIS Field Plate Structure for Edge Termination of GaN Vertical PN Diode;Micromachines;2023-10-28
3. A comprehensive review of AlGaN/GaN High electron mobility transistors: Architectures and field plate techniques for high power/ high frequency applications;Microelectronics Journal;2023-10
4. Physical insights into the reliability of sunken source connected field plate GaN HEMTs for mm-wave applications;Microelectronics Reliability;2023-09
5. Investigation on Fe-Doped AlGaN/GaN HEMT at 148 GHz Using E-FPL Technology for High-Frequency Communication Systems;ECS Journal of Solid State Science and Technology;2023-03-01
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