Activation of buried p-GaN in MOCVD-regrown vertical structures-Reference-Cited by-同舟云学术

Activation of buried p-GaN in MOCVD-regrown vertical structures

Published:2018-08-06 Issue:6 Volume:113 Page:062105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Li Wenshen¹,Nomoto Kazuki¹,Lee Kevin¹,Islam S. M.¹,Hu Zongyang¹^ORCID,Zhu Mingda¹,Gao Xiang²,Xie Jinqiao³,Pilla Manyam³,Jena Debdeep¹⁴,Xing Huili Grace¹⁴^ORCID

Affiliation:

1. School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA

2. IQE RF LLC, Somerset, New Jersey 08873, USA

3. Qorvo, Inc., Richardson, Texas 75080, USA

4. Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA

Funder

National Science Foundation

Advanced Research Projects Agency - Energy

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5041879

Reference41 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown

3. K. Nomoto , Z. Hu , B. Song , M. Zhu , M. Qi , R. Yan , V. Protasenko , E. Imhoff , J. Kuo , N. Kaneda , T. Mishima , T. Nakamura , D. Jena , and H. G. Xing , in IEEE IEDM (2015), p. 9.7.

4. Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV

5. High voltage and high current density vertical GaN power diodes

Cited by 42 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and Demonstration of MOCVD-Grown p-Type Al_xGa_1-xN/GaN Quantum Well Infrared Photodetector;IEEE Photonics Journal;2024-10

2. Breakdown Voltage and Leakage Current of the Nonuniformly Activated Lightly Doped p-GaN;IEEE Transactions on Electron Devices;2024-09

3. Enhancing the Forward Gate Bias Robustness in p‐GaN Gate High‐Electron‐Mobility Transistors through Doping Profile Engineering;physica status solidi (a);2024-04-21

4. A High Channel Mobility and a Normally‐off Operation of a Vertical GaN Metal‐Oxide‐Semiconductor Field‐Effect Transistors using an AlSiO/AlN Gate Stack Structure on m‐plane Trench Sidewall;physica status solidi (RRL) – Rapid Research Letters;2024-04-02

5. Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability;Applied Physics Letters;2024-03-11