Solution processed lanthanum aluminate gate dielectrics for use in metal oxide-based thin film transistors-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Solution processed lanthanum aluminate gate dielectrics for use in metal oxide-based thin film transistors

Published:2015-05-18 Issue:20 Volume:106 Page:203507
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Esro M.¹,Mazzocco R.²,Vourlias G.³,Kolosov O.²,Krier A.²,Milne W. I.⁴⁵,Adamopoulos G.¹

Affiliation:

1. Engineering Department, Lancaster University, Lancaster LA1 4YR, United Kingdom

2. Physics Department, Lancaster University, Lancaster, LA1 4YB, United Kingdom

3. Physics Department, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece

4. Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom

5. Department of Electrical and Computing Engineering, University of Canterbury, 4800 Christchurch, New Zealand

Funder

Ministry of Higher Education, Malaysia (MOHE)

Universiti Teknikal Malaysia Melaka (UTeM)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4921262

Reference36 articles.

1. High-Performance Solution-Processed Amorphous Zinc−Indium−Tin Oxide Thin-Film Transistors

2. Ultralow-Voltage Electric Double-Layer SnO2 Nanowire Transistors Gated by Microporous SiO2-Based Solid Electrolyte

3. Titanium dioxide (TiO2)-based gate insulators

4. Metal-oxide-semiconductor capacitors with ZrO2 dielectrics grown on In0.53Ga0.47As by chemical beam deposition

5. The Characteristics of Growth of Films of Zirconium and Hafnium Oxides (ZrO2, HfO2) by Thermal Decomposition of Zirconium and Hafnium β‐Diketonate Complexes in the Presence and Absence of Oxygen

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-resolution spectroscopy of LaAlO3-Pr3+ pseudo-cubic perovskite single crystals: Crystal-field parameters, hyperfine and deformation splittings;Optical Materials;2024-08

2. Boronization: A General Strategy for Rare Earth Oxides with Enhanced High-κ Gate Dielectric Performance;ACS Applied Materials & Interfaces;2023-11-07

3. Electronic materials for solution-processed TFTs;Materials Research Express;2023-08-01

4. Effects of Ti Doping on the Electrical Properties and Gate-Bias Stability of Amorphous Zinc–Tin–Oxide Thin-Film Transistors;ACS Applied Electronic Materials;2023-05-30

5. High-Resolution Spectroscopy of Laalo3:Pr3+ Pseudo-Cubic Single Crystals: Crystal-Field Parameters, Hyperfine and Deformation Splittings;2023

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3