Ultralow-Voltage Electric Double-Layer SnO2 Nanowire Transistors Gated by Microporous SiO2-Based Solid Electrolyte-Reference-Cited by-同舟云学术

Ultralow-Voltage Electric Double-Layer SnO2 Nanowire Transistors Gated by Microporous SiO2-Based Solid Electrolyte

Published:2010-06-24 Issue:28 Volume:114 Page:12316-12319
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Liu Huixuan¹,Sun Jia¹,Tang Qingxin¹,Wan Qing¹

Affiliation:

1. Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, 410082, and Ningbo Institute of Material Technology & Engineering, Chinese Academy of Sciences, Ningbo, 315201, People’s Republic of China

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp1018789

Reference30 articles.

1. Chemistry and Physics in One Dimension: Synthesis and Properties of Nanowires and Nanotubes

2. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices

3. Field-Effect Transistors Based on Single Semiconducting Oxide Nanobelts

4. Fabrication and electrical characteristics of high-performance ZnO nanorod field-effect transistors

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