Amorphization of germanium, gallium phosphide, and gallium arsenide by laser quenching from the melt
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93798
Reference13 articles.
1. Supersaturated substitutional alloys formed by ion implantation and pulsed laser annealing of group‐III and group‐V dopants in silicon
2. Segregation and increased dopant solubility in Pt‐implanted and laser‐annealed Si layers
3. Tem Study Of Silicon Laser Annealed After The Implantation Of Low Solubility Dopants
4. Growth interface breakdown during laser recrystallization from the melt
5. Interface instability and cell formation in ion‐implanted and laser‐annealed silicon
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