Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference66 articles.
1. The era of hyper-scaling in electronics;Salahuddin;Nat. Electron.,2018
2. High-k/metal-gate stack and its MOSFET characteristics;Chau;IEEE Electron Device Lett.,2004
3. M. Jurczak, N. Collaert, A. Veloso, T. Hoffmann, S. Biesemans, Review of FINFET technology, Int. SOI conference (2009) pp. 1-4. https://doi.org/10.1109/SOI.2009.5318794.
4. K. Cheng, A. Khakifirooz, N. Loubet, S. Luning, T. Nagumo, M. Vinet, Q. Liu, A. Reznicek, T. Adam, S. Naczas, High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET, Int. Electron Devices Meet. (2012) pp. 18.11. 11-18.11. 14. https://doi.org/10.1109/IEDM.2012.6479063.
5. International Roadmap for Devices and Systems (IRDS™) 2021 Edition, https://irds.ieee.org/editions/2021, 2021.