Supersaturated substitutional alloys formed by ion implantation and pulsed laser annealing of group‐III and group‐V dopants in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.327334
Reference28 articles.
1. Laser Annealing of Ion-Implanted Semiconductors
2. Time‐resolved reflectivity of ion‐implanted silicon during laser annealing
3. Redistribution of dopants in ion‐implanted silicon by pulsed‐laser annealing
4. Effects of pulsed ruby‐laser annealing on As and Sb implanted silicon
5. Depth of melting produced by pulsed‐laser irradiation
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