Tem Study Of Silicon Laser Annealed After The Implantation Of Low Solubility Dopants
Author:
Publisher
Wiley
Subject
Histology,Pathology and Forensic Medicine
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1111/j.1365-2818.1980.tb00244.x/fullpdf
Reference13 articles.
1. Time resolved reflectivity of ion implanted silicon during laser annealing;Auston;Appl. Phys. Letters,1978
2. Segregation effects in Cu-implanted Si after laser pulse melting;Baeri;Phys. Rev. Letters,1978
3. Constitutional supercooling during crystal growth from stirred melts. III. The morphology of the germanium cellular structure;Bardsley;Solid-State Electron.,1962
4. Electron microscope study of electrically active impurity precipitate defects in silicon;Cullis;Phil. Mag.,1974
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