The recovery effects of electron beam pulse treatment in Sn implanted Ge-Reference-Cited by-同舟云学术

The recovery effects of electron beam pulse treatment in Sn implanted Ge

Published:2022-08-18 Issue:9-10 Volume:177 Page:1088-1102
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Werner Zbigniew¹,Barlak Marek¹,Ratajaczak Renata¹,Kentsch Ulrich²,Heller René²,Munnik Frans²,Konarski Piotr³,Dłużewski Piotr⁴,Pisarek Marcin⁵,Kozłowski Mirosław³,Ażgin Joachim³,Zagórski Jerzy¹,Staszkiewicz Bogdan¹

Affiliation:

1. National Centre for Nuclear Research (NCBJ), Otwock, Poland

2. Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Dresden, Germany

3. Łukasiewicz Research Network – Tele and Radio Research Institute, Warsaw, Poland

4. Institute of Physics of the Polish Academy of Sciences (IF PAN), Warsaw, Poland

5. Institute of Physical Chemistry of the Polish Academy of Sciences (IChF PAN), Warsaw, Poland

Funder

Polish Ministry of Science and Higher Education

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

https://www.tandfonline.com/doi/pdf/10.1080/10420150.2022.2113076

Reference24 articles.

1. Electron-beam pulse annealed Ti-implanted GaP

2. The influence of distribution of titanium alloyed into carbon ceramics by the intense plasma pulses on their surface wettability with liquid copper

3. Dependence of the specific features of two PAPVD methods: Impulse Plasma Deposition (IPD) and Pulsed Magnetron Sputtering (PMS) on the structure of Fe–Cu alloy layers

4. Predicted band gap of the new semiconductor SiGeSn

5. Synthesis of Ge1−x Sn x Alloy Thin Films Using Ion Implantation and Pulsed Laser Melting (II-PLM)