Author:
Turkot B. A.,Robertson I. M.,Rehn L. E.,Baldo P. M.,Forbes D. V.,Coleman J. J.
Subject
General Physics and Astronomy
Cited by
8 articles.
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1. MD simulation of ion implantation damage in AlGaAs: III. Defect accumulation and amorphization;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-01
2. MD simulation of ion implantation damage in AlGaAs: II. Generation of point defects;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-01
3. Damage behaviour of GaAs/AlAs multilayer structures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-08
4. Direct observation of electron-beam-induced nucleation and growth in amorphous GaAs;Materials Science in Semiconductor Processing;2004-02
5. Strain and compositional profile determination in ion bombarded heterostructures by the complementary use of RBS/channeling and high resolution X-ray diffraction;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-05