Direct observation of electron-beam-induced nucleation and growth in amorphous GaAs-Reference-Cited by-同舟云学术

Direct observation of electron-beam-induced nucleation and growth in amorphous GaAs

Published:2004-02 Issue:1-2 Volume:7 Page:19-25
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Li Z.C,Zhang H,Xu Y.B

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference25 articles.

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4. Electron-beam-induced crystallization of isolated amorphous regions in Si, Ge, GaP, and GaAs;Jenčič;J Appl Phys,1995

5. Nucleation and growth of Ge on Si(111) in solid phase epitaxy;Suzumura;Thin Solid Films,2000

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