Differential ion damage and its annealing behavior in AlAs/GaAs heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347314
Reference16 articles.
1. Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures
2. Disordering of Si-Doped AlAs/GaAs Superlattice by Annealing
3. Compositional Disordering of GaAs-AlxGa1-xAs Superlattice by Ga Focused Ion Beam Implantation and its Application to Submicron Structure Fabrication
4. Defect structure and intermixing of ion‐implanted AlxGa1−xAs/GaAs superlattices
5. Kinetics of implantation enhanced interdiffusion of Ga and Al at GaAs‐GaxAl1−xAs interfaces
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1. Effects of temperature and energy on the radiation response of GaAs/AlAs and GaAs/AlGaAs superlattices;Radiation Physics and Chemistry;2020-09
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3. A comparative study of low energy radiation response of AlAs, GaAs and GaAs/AlAs superlattice and the damage effects on their electronic structures;Scientific Reports;2018-01-31
4. Ion-beam induced effects in multi-layered semiconductor systems;physica status solidi (b);2016-07-15
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