Kinetics of implantation enhanced interdiffusion of Ga and Al at GaAs‐GaxAl1−xAs interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97178
Reference9 articles.
1. Transmission electron microscopy of interfaces in III–V compound semiconductors
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4. Disorder of an AlAs‐GaAs superlattice by impurity diffusion
5. Disorder of an AlAs‐GaAs superlattice by silicon implantation
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