Selective ion-induced intermixing and damage in low-dimensional GaN/AlN quantum structures-Reference-Cited by-同舟云学术

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Selective ion-induced intermixing and damage in low-dimensional GaN/AlN quantum structures

Published:2013-11-27 Issue:50 Volume:24 Page:505717
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Redondo-Cubero A,Lorenz K,Wendler E,Carvalho D,Ben T,Morales F M,García R,Fellmann V,Daudin B

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/24/i=50/a=505717/pdf

Reference61 articles.

1. Theory of semiconductor superlattice electronic structure

2. A bird's-eye view on the evolution of semiconductor superlattices and quantum wells

3. Spontaneous polarization and piezoelectric constants of III-V nitrides

4. Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of radiation damage on GaN epitaxial layer arising from argon ion implantation for edge termination;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-05

2. An insider view of the Portuguese ion beam laboratory;The European Physical Journal Plus;2021-06

3. Simulating the effect of Ar+ energy implantation on the strain propagation in AlGaN;Journal of Physics D: Applied Physics;2021-03-30

4. Multiple reflection optimization package for X-ray diffraction;CrystEngComm;2021

5. Luminescence properties of MOCVD grown Al0.2Ga0.8N layers implanted with Tb;Journal of Luminescence;2019-06

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