Ion-beam induced effects in multi-layered semiconductor systems-Reference-Cited by-同舟云学术

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Ion-beam induced effects in multi-layered semiconductor systems

Published:2016-07-15 Issue:11 Volume:253 Page:2099-2109
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Wendler Elke¹,Sobolev Nikolai A.²,Redondo-Cubero Andrés³,Lorenz Katharina⁴

Affiliation:

1. Institut für Festkörperphysik; Friedrich-Schiller-Universität Jena; Max-Wien-Platz 1 07743 Jena Germany

2. Departamento de Física, i3N; Universidade de Aveiro; 3810-193 Aveiro Portugal

3. Departamento de Física Aplicada y Centro de Microanálisis of Materiales; Universidad Autónoma de Madrid; 28049 Madrid Spain

4. IPFN, Instituto Superior Técnico; Universidade de Lisboa, Estrada National; 2695-066 Bobadela LRS Portugal

Funder

Fundação para a Ciência e a Tecnologia

Juan de la Cierva

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference58 articles.

1. Historical perspective and future trends for ion implantation systems

2. Ion implantation from the past and into the future

3. Early ion implantation history (or “how I met Jim Mayer—and Högsted Phim!”)

4. History of industrial and commercial ion implantation 1906–1978

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental re-evaluation of proton penetration ranges in GaAs and InGaP;Journal of Physics D: Applied Physics;2021-01-12

2. Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching;Semiconductors;2019-11

3. Dynamical X-ray diffraction theory: Characterization of defects and strains in as-grown and ion-implanted garnet structures;physica status solidi (b);2017-03-20

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