Author:
Klatt J. L.,Averback R. S.,Forbes D. V.,Coleman J. J.
Subject
Physics and Astronomy (miscellaneous)
Cited by
14 articles.
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1. Ion-beam induced effects in multi-layered semiconductor systems;physica status solidi (b);2016-07-15
2. In situ investigation of AlAs/GaAs interfaces during ion implantation at 15 K;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-04
3. Anomalous damaging behaviour of AlAs during ion implantation at 15 K;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-04
4. Compositional variation of microstructure in ion-implanted AlxGa1−xAs;Journal of Materials Research;2000-09
5. On the amorphization process in Al0.6Ga0.4As/GaAs heterostructures;Journal of Applied Physics;1998-03