MD simulation of ion implantation damage in AlGaAs: III. Defect accumulation and amorphization
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference25 articles.
1. A comparison of the amorphization induced in AlxGa1−xAs and GaAs by heavy‐ion irradiation
2. The nature of keV and MeV ion damage in AlxGa1−xAs/GaAs and AlAs/GaAs heterostructures
3. Ion damage buildup and amorphization processes in AlxGa1−xAs
4. X-ray diffraction and channeling-Rutherford backscattering spectrometry studies of ion implantation damage in AlxGa1−xAs
5. On the amorphization process in Al0.6Ga0.4As/GaAs heterostructures
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1. Nonlinear compositional and morphological evolution of ion irradiated GaSb prior to nanostructure formation;Scientific Reports;2020-05-19
2. Primary Processes of Damage Formation in Semiconductors;Ion Beam Modification of Solids;2016
3. Comparison of low- and room-temperature damage formation in Ar ion implanted GaN and ZnO;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-07
4. Damage evolution and amorphization in semiconductors under ion irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-04
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