X-ray diffraction and channeling-Rutherford backscattering spectrometry studies of ion implantation damage in AlxGa1−xAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366824
Reference16 articles.
1. Differential ion damage and its annealing behavior in AlAs/GaAs heterostructures
2. The nature of keV and MeV ion damage in AlxGa1−xAs/GaAs and AlAs/GaAs heterostructures
3. Material‐dependent amorphization and epitaxial crystallization in ion‐implanted AlAs/GaAs layer structures
4. Fabrication of amorphous‐crystalline superlattices in GeSi‐Si and GaAs‐AlAs
5. Damage accumulation and amorphization in GaAs-AlGaAs structures
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