Electron mobility enhancement in Si using doubly δ‐doped layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111773
Reference8 articles.
1. High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer
2. Fabrication of high mobility two‐dimensional electron and hole gases in GeSi/Si
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4. MBE growth and electrical behaviour of single and double Si δ-doped InGaAs-layers
5. Electron mobility enhancement from coupled wells in delta‐doped GaAs
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