Electron mobility enhancement from coupled wells in delta‐doped GaAs-Reference-Cited by-同舟云学术

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Electron mobility enhancement from coupled wells in delta‐doped GaAs

Published:1993-02 Issue:5 Volume:62 Page:504-506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zheng X.,Carns T. K.,Wang K. L.,Wu B.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.108893

Reference7 articles.

1. Observation of high mobility and cyclotron resonance in 20 Å silicon delta-doped GaAs grown by MBE at 480 °C

2. Experimental and theoretical mobility of electrons in δ‐doped GaAs

3. Electron-mobility enhancement and electron-concentration enhancement in δ-doped n-GaAs at T=300K

4. High‐differential mobility of hot electrons in delta‐doped quantum wells

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