Characterization ofDXcenters in selectively doped GaAs‐AlAs superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103471
Reference17 articles.
1. Deep donor levels (DXcenters) in III‐V semiconductors
2. The capture barrier of theDXcenter in Si‐doped AlxGa1−xAs
3. Effect of local alloy disorder on emission kinetics of deep donors (DXcenters) in AlxGa1−xAs of low Al content
4. Suppression ofDXcenters in GaAlAs‐GaAs heterostructures
5. Electrical characterization of AlAs layers and GaAs‐AlAs superlattices
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Deep levels in uniformly Si doped GaAs/AlxGa1−xAs quantum wells and superlattices;Journal of Applied Physics;1996-09
2. Techniques to minimizeDXcenter deleterious effects in III‐V device performance;Journal of Applied Physics;1993-05-15
3. DXcenter electron occupancy under hydrostatic pressure in Si‐doped Iny(Ga1−xAlx)1−yAs alloys;Applied Physics Letters;1992-10-12
4. Native defects in a (GaP)1/(InP)1strained-layer superlattice: local electronic structure and diffusion mechanism;Journal of Physics: Condensed Matter;1992-02-03
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