Effect of local alloy disorder on emission kinetics of deep donors (DXcenters) in AlxGa1−xAs of low Al content
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100203
Reference18 articles.
1. Comprehensive analysis of Si-dopedAlxGa1−xAs(x=0 to 1): Theory and experiments
2. Hot‐electron capture toDXcenters in AlxGa1−xAs at low Al mole fractions (x<0.2)
3. Electron Localization by a Metastable Donor Level inn−GaAs: A New Mechanism Limiting the Free-Carrier Density
4. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
5. Evidence for large lattice relaxation at theDXcenter in Si-dopedAlxGa1−xAs
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