Suppression ofDXcenters in GaAlAs‐GaAs heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100774
Reference15 articles.
1. Direct evidence of theDXcenter link to theL‐conduction‐band minimum in GaAlAs
2. Optically detected magnetic resonance from the DX centre in silicon-doped AlxGa1-xAs
3. A photoluminescence study of the donor structure in AlxGa1-xAs
4. Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System -- a Novel Short Period AlAs/n-GaAs Superlattice --
5. Elimination of a DX-center by an AlAs/n-GaAs superlattice and its application to 2DEGFETs
Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Self-consistent analysis of persistent photoconductivity data in Si δ-doped AlxGa1−xAs (x=0.32) superlattices;Journal of Applied Physics;1998-11
2. Deep levels in uniformly Si doped GaAs/AlxGa1−xAs quantum wells and superlattices;Journal of Applied Physics;1996-09
3. Interface-related defects in a Ge0.4Si0.6/Si single well;Semiconductor Science and Technology;1995-02-01
4. Techniques to minimizeDXcenter deleterious effects in III‐V device performance;Journal of Applied Physics;1993-05-15
5. Chapter 6 DX and Related Defects in Semiconductors;Imperfections in III/V Materials;1993
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