Optically detected magnetic resonance from the DX centre in silicon-doped AlxGa1-xAs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/21/i=10/a=003/pdf
Reference18 articles.
1. EPR Studies on AlxGa1-xAs Mixed Crystals
2. Energy transfer effects in ODMR spectra: a possible source of misinterpretation
3. A new model of deep donor centres in AlxGa1-xAs
Cited by 30 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Photoluminescence of the Se and Si DX centers in (AlxGa1−x)0.5In0.5P (x<0.5) grown by metalorganic vapor phase epitaxy;Journal of Applied Physics;1997-08
2. Deep‐center oxygen‐related photoluminescence in GaAs doped with dimethylaluminum methoxide during organometallic vapor phase epitaxy;Journal of Applied Physics;1995-08
3. A broad photoluminescence band in heavily Ge‐doped GaAs grown by the liquid‐encapsulated Czochralski technique;Journal of Applied Physics;1994-11-15
4. Enhancement of photoluminescence fromDXcenters in AlGaAs heterostructures;Applied Physics Letters;1993-04-19
5. The identification of Si donor states in AlxGa1−xAs by photoluminescence;Journal of Applied Physics;1992-08-15
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