The identification of Si donor states in AlxGa1−xAs by photoluminescence
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351751
Reference17 articles.
1. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
2. Assessment of persistent-photoconductivity centers in MBE grown Al x Ga1-x as using capacitance spectroscopy measurements
3. Discovery of a new photoinduced electron trap state shallower than the DX center in Si doped AlxGa1−xAs
4. Identifications of photoluminescence and deep level transient spectra for Te-doped Al x Ga 1- x As
5. Characterization of theDXcenter in the indirectAlxGa1−xAsalloy
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photoluminescence of individual doped GaAs∕AlGaAs nanofabricated quantum dots;Applied Physics Letters;2007-04-30
2. Dominant direct transitions in annealed GaAs/AlAs multiple quantum wells;Applied Surface Science;1999-09
3. Investigation of defects in Ge-doped GaAs crystal grown in a magnetic field;Acta Physica Sinica (Overseas Edition);1995-02
4. Photoluminescence of AlxGa1−xAs alloys;Journal of Applied Physics;1994-05-15
5. Photoluminescence Properties of Sn-Related Donor State in AlxGa1-xAs;Japanese Journal of Applied Physics;1993-08-15
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