Characterization of theDXcenter in the indirectAlxGa1−xAsalloy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.37.1043/fulltext
Reference19 articles.
1. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
2. Photoconductivity storage in Ga1−xAlxAs alloys at low temperatures
3. Symmetry of Donor-Related Centers Responsible for Persistent Photoconductivity inAlxGa1−xAs
4. Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System
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3. X-ray induced persistent photoconductivity in Si-doped Al0.35Ga0.65As;Journal of Applied Physics;2001-12-15
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