Symmetry of Donor-Related Centers Responsible for Persistent Photoconductivity inAlxGa1−xAs
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.43.1536/fulltext
Reference12 articles.
1. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
2. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
3. Long‐lifetime photoconductivity effect inn‐type GaAlAs
4. Hall-Effect Analysis of Persistent Photocurrents inn-GaAs Layers
5. Saturable optical absorption of the deep Te-complex center inAl0.4Ga0.6As
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