X-ray induced persistent photoconductivity in Si-doped Al0.35Ga0.65As
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1410894
Reference18 articles.
1. Deep donor levels (DXcenters) in III‐V semiconductors
2. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
3. Theory of the Atomic and Electronic Structure ofDXCenters in GaAs andAlxGa1−xAsAlloys
4. Energetics ofDX-center formation in GaAs andAlxGa1−xAs alloys
5. Long‐lifetime photoconductivity effect inn‐type GaAlAs
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