Photoluminescence of the Se and Si DX centers in (AlxGa1−x)0.5In0.5P (x<0.5) grown by metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365909
Reference16 articles.
1. Room‐temperature continuous‐wave operation of an AlGaInP double heterostructure laser grown by atmospheric pressure metalorganic chemical vapor deposition
2. Room-temperature CW operation of AlGaInP double-heterostructure visible lasers
3. High‐brightness InGaAlP green light‐emitting diodes
4. Optically detected magnetic resonance from the DX centre in silicon-doped AlxGa1-xAs
5. Luminescence of theDXcenter in AlGaAs
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